domingo, 9 de mayo de 2010

Samsung prepara un micro-obturador para cámaras de celular



La compañía coreana Samsung se encuentra desarrollando una pequeña pieza para las cámaras digitales integradas en teléfonos que puede revolucionar al mercado. Se trata de un obturador de tan sólo 2.2 mm de diámetro basado en tecnología MEMS (sistemas microelectromecánicos).

Básicamente el obturador es la parte que permite la entrada de luz a la cámara y que se encuentra incorporado tras del lente. El obturador se abre cuando se fotografía en lugares oscuros y se cierra a plena luz, dejando un orificio mínimo.
La ventaja de de este micro-obturador -con el tamaño ideal para dispositivos móviles como los celulares- es que mejorará notablemente las imágenes tomadas con cámaras de alta resolución, como la cámara del Sony Ericsson Idou de 12 MP o la de 8 MP del Nokia N86.
Avances tecnológicos como éste son excelentes noticias para los fans de las cámaras con teléfono, ya que dan cuenta que los fabricantes no sólo están preocupados de meter más megapíxeles en los equipos (que en realidad no aporta nada salvo imágenes más grandes), sino que también en mejorar la calidad de las fotos que se pueden obtener con un celular.

Por el momento se desconoce cuánto costará el obturador y cuándo estará totalmente desarrollado. Supuestamente será más barato que los obturadores tradicionales y lo más posible es que falte bastante tiempo para verlo integrado en equipos, pero los resultados valdrán la espera.


 

Montan un lente de cámara dSLR en un iPhone

No es ningún misterio que uno de los puntos en contra del iPhone es su cámara mediocre, pero ponerle un lente de una cámara dSLR parece demasiado loco, aunque justamente es lo que hoy les mostramos. Un hack que permite utilizar un querido lente Canon 18-55 IS, también conocido como pISapapeles junto a tu iPhone.

Con esta modificación casera se gana en zoom óptico y en efectos de enfoque selectivo, pero las aberraciones cromáticas y el viñeteo hacen de las suyas. Sin duda sólo una muestra curiosa de lo que se puede hacer con tiempo y dedicación que puedes replicar siguiendo esta guía.


 
 
Nombre: Lenny D. Ramirez C.
Asignatura: CRF
Dirección: http://www.wayerless.com/up/2009/05/samsung-mems-shutter_01.jp
Ver blogg: http://lennyramirez-crf.blogspot.com/

Structured Design Methodology for MEMS


One important trend in microelectromechanical systems (MEMS) is toward monolithic systems where micromechanical devices are integrated with digital I/O, self-test, auto-calibration, digital compensation, and other signal processing functions. There is a growing demand in the MEMS community for rapid micromechanical design and analysis of complex systems involving multiple physical domains, including mechanical, electrostatic, magnetic, thermal, fluidic, and optical domains.
An important question generated in this workshop is: Can structured design methods for MEMS be developed by making an analogy to the VLSI design methodology? CAD for VLSI spans many levels of abstraction from materials, device, circuit, logic, register, to system level. At each of these levels, a design can be viewed in physical, structural (schematic), or behavioral form. A similar esign hierarchy for MEMS is feasible and sorely needed. Analogous hierarchical levels up to he VLSI ‘circuit’ level are easily made; higher levels of abstraction may evolve for MEMS that are ifferent from the VLSI paradigm. A first task in development of structured MEMS design tools is he formation of standard data representations and standard cell libraries. An enormous effort is necessary o identify and to model reusable MEMS processes, elements, devices, and architectures.
MEMS CAD tools must be integrated, with appropriate links available to the designer to switch between different lateral views and hierarchical levels.
An initial wish-list in the MEMS CAD toolset includes:


• standard MEMS data representations and interchange formats

• standard MEMS cell libraries supporting behavioral, schematic, and physical views at all levels of abstraction (e.g. materials database, layout cells, schematic element library, and a system macro-model library)

• standard MEMS process-module libraries and standard process flows

• process simulation and visualization

• process synthesis and technology file extraction

• 3D rendering and animation

• 3D generation from layout and technology files

• layout of arbitrarily shaped objects with design rule checking

• layout synthesis and verification

• fast modeling and verification tools; coupled multi-domain, numerical analysis (e.g. finiteelement method, boundary-element method)

• parasitic extraction to schematic and behavioral views

• macro-model parameter extraction from physical and schematic views

• multi-domain schematic capture (i.e. schematic view showing connectivity between mechanical, electromechanical, thermal, and circuit lumped-parameter elements)

• mixed-signal multi-level multi-domain simulation
 
Current MEMS CAD Tools
Several groups have existing research programs to address the deficiency in MEMS design tools. Examples from the U.S.A. include MEMCAD (M.I.T.)[1] and CAEMEMS (Univ. of Michigan) [2]; examples from Europe include CAPSIM (Catholic Univ. of Leuven, Belgium)[3], SENSOR (Fraunhofer Institute, Germany)[4], and SESES (ETH, Zürich)[5]. These tools involve general numerical analysis of layout and generation of macro-models for simulation. MEMCAD has evolved into a MEMS modeling framework with rapid self-consistent electromechanical 3D numerical simulation. Recent advances have been made in simplifying the input and visualization of 3D models of micromechanical structures from layout using the MEMBUILDER tool[6]. CAEMEMS is a framework in which the users chooses among modules that address specific design
domains. CAEMEMS automatically generates a set of parameterized response surfaces by launching multiple finite-element analyses. IntelliCAD[7] available from IntelliSense Corp. is a commercial MEMS CAD tool with automated 3D modeling from layout and process integrated with numerical analysis. Other commercial tools by Tanner Research[8] cater to the MEMS community by allowing layout of non-manhattan geometry and supplying MEMS technology files with design rule checking. These tools are definite improvements over use of Magic or KIC for layout and stand-alone numerical analysis tools (e.g. ABAQUS, ANSYS, Maxwell). More effort must be poured into fast multi-domain numerical analysis tools specifically tailored for MEMS design. MEMS process simulation and synthesis tools are needed and are being developed[9], but a discussion is outside the scope of this summary.
Current MEMS Design Practices

Current MEMS design practices focus on physical device and process development. A simplified design methodology is shown in Figure 1. Design concepts are implemented in a manual layout.
The performance is then analyzed using numerical analysis tools, usually resulting in iterations on both the layout and the underlying process. The present state-of-the-art in MEMS CAD relies on device-level extraction of macro-models in a limited set of energy domains for behavioral simulation. Current commercial design tools cannot deal with the complex multi-domain architectures that will be necessary to create the next-generation of commercial MEMS. Much future work should focus on creating very fast multi-domain numerical simulation tools to ease both process development and device macro-modeling. However, these numerical tools by themselves may not be practical for rapid iterative design since the physical layout (and perhaps the process) must be changed for each iteration without necessarily knowing what to change to best to improve the device performance.
Currently, a self-consistent electromechanical analysis of a simple device requires many man-hours to create the 3-D geometry and perform a numerical analysis. The manual design cycle in MEMS has not decreased significantly over the past few years since knowledge from previous development efforts cannot be easily reused by future developers.
MEMS Process Services
MEMS covers a broad, evolving spectrum of fabrication processes. This fact makes it very difficult to foresee the ultimate MEMS CAD framework. Our initial efforts at Carnegie Mellon have focussed on design tools for surface-micromachined MEMS, such as polysilicon MEMS built in MCNC’s MUMPs process[10], and laminated oxide/aluminum MEMS built using MOSIS followed by an in-house dry-etch release step[11]. There are a several important benefits of making microstructures with stable foundry services such as MUMPs and MOSIS:
• sensor fabrication is fast and reliable, all, or most, fabrication steps are done externally, so research resources can be invested in design, not standard processing,
• the process is repeatable, so circuit and microstructure designs can be re-used,
• devices improve as the process technology improves (e.g. scaling), and
• prototypes can be reproduced at any time.
Because of their planar ‘2 1/2-D’ topology, surface micromechanics is a MEMS technology which lends itself to abstraction in conventional schematic capture tools. Once a working structured design methodology is established for surface-micromachined MEMS, the techniques may be extended to other processes, such as bulk-machined Si or a dissolved-wafer process. The long-term goal is to enable rapid, intuitive exploration and analysis of the design space for complex MEMS.





Nombre: Lenny D. Ramirez C.
Asignatura: CRF
Dirección: http://design.caltech.edu/NSF_MEMS_Workshop/fedder.pdf
Ver blogg: http://lennyramirez-crf.blogspot.com/

Giroscopios MEMS de uno y dos ejes


Giroscopios MEMS de uno y dos ejes Ofrece mejoras en interfaces de usuario, juegos, navegación GPS y estabilización de imagen de cámara.

STMicroelectronics, uno de los mayores fabricantes de soluciones MEMS para aplicaciones de consumo y portátiles, ha introducido una nueva familia de giroscopios MEMS (Micro-Electro-Mechanical Systems) de uno y dos ejes.



Beneficiándose de la tecnología ‘micromachining’ de la compañía, que utiliza las propiedades mecánicas exclusivas del silicio al crear estructuras en el chip semiconductor para medir el movimiento, los giroscopios ST desarrollan mejoras en rendimiento y fiabilidad para la detección de movimiento angular en aplicaciones de interface hombre-máquina (HMI), sistemas de navegación y estabilización de imagen en cámaras digitales.

La familia de giroscopios MEMS de uno (viraje) y dos (‘pich-and-roll’ y ‘pich-and-yaw’) ejes ofrecen el rango ‘full-escale’ más amplio de la industria que va de 30 a 6.000 dps (grados por segundo). Sus novedosos sensores pueden dotar de dos salidas separadas para cada eje al mismo tiempo: un valor de salida no amplificada para detección general de movimiento angular y una amplificación 4x para mediciones de alta resolución que aumenta la flexibilidad de diseño y la experiencia del usuario.
Estos modelos de ST se distinguen por una excelente estabilidad sobre un extenso rango de temperatura, con una variación típica inferior a 0.05 dps / °C para nivel ‘zero-rate’, eliminando así la necesidad de compensación de temperatura adicional en la aplicación. La precisión de medición queda garantizada con un nivel mínimo de ruido que apenas afecta la señal de salida (0.014 dps / sqrt (Hz) a 30 dps ‘full-scale’).

Los giroscopios MEMS de elevado rendimiento son resistentes al estrés mecánico como consecuencia del proceso exitosamente aplicado en millones de acelerómetros ST vendidos en el mercado y pueden operar con cualquier tensión de alimentación en el rango de 2.7 a 3.6 V.

El encapsulado LGA de 5 x 5 mm, junto con un diseño innovador, garantiza un alto nivel de integración en aplicaciones con restricciones de espacio, así como un mayor rendimiento y estabilidad de soldadura, superando las prestaciones de alternativas cerámicas.
Entre los primeros giroscopios disponibles se encuentran los modelos LPR503AL ‘pitch-and-roll’ de dos ejes con un rango de 30 a 120 dps, y el LPY550AL ‘pitch-and-yaw’ de dos ejes con un rango de 500 a 2.000 dps.

Nombre: Lenny D. Ramirez C.
Asignatura: CRF
Dirección: http://noticiasit.tincan.es/giroscopios-mems-de-uno-y-dos-ejes/
Ver blogg: http://lennyramirez-crf.blogspot.com/

Aluminum Nitride RF MEMS Resonators

Aluminum Nitride RF MEMS Resonators

Sandia has developed an aluminum nitride (AlN) process for fabricating RF MEMS micro resonators at frequencies ranging from 1 MHz to 3 GHz. This process uses the same equipment and materials that were developed to fabricate FBARS (film bulk acoustic resonators), which are widely used to implement cellular phone duplexers and filters at 1.9 GHz. Like FBARS, the piezoelectric transduction mechanism of these resonators allows the realization of low insertion loss filters. Unlike FBARS, Sandia's AlN process allows resonators at any frequency between 1 MHz and 3 GHz to be fabricated on the same wafer because the resonant frequency is determined lithographically. The AlN resonator process also includes Sandia's unique molded tungsten (W) capabilities. Incorporation of W into the AlN process eliminates the need for resonators that are suspended above the substrate by quarter-wave beams. It is this technology that allows the scaling of AlN resonators into the GHz range without introducing spurious modes, reductions in quality factor (Q), and with acceptable power handling for both the transmit and receive paths in full-duplex radios. This technology is most suited for realizing resonators from 1 MHz to 3 GHz, with Q's approaching 5000, and impedances less than 300 Ohms.



Narrow-gap Polysilicon RF MEMS Resonators

A polysilicon MEMS resonator process has been developed at Sandia for the fabrication of high-Q oscillator references and intermediate frequency (IF) filters. This process can achieve electrode-to-resonator gaps less than 100 nm, which is needed to reduce the impedance of capacitively transduced devices. While high frequency resonators can be implemented in this process, it is best suited for fabricating resonators below 200 MHz because the impedance levels are significantly lower at these frequencies. Advantages of these polysilicon resonators when compared to microfabricated piezoelectric resonators include much higher Q (> 60,000), low drift, tunability, and low vibration sensitivity. These properties make polysilicon µresonators ideal for implementing miniature oscillators and IF filter banks for RF MEMS applications.



RF MEMS Reliability

Through measurement, characterization and analysis, we provide customer feedback to improve operation, performance and reliability of MEMS components, specifically RF switches. We have testing capabilities at the DARPA standard for MEMS switches (RFMIP) of 10 GHz. We have conducted environmentally controlled studies of switch performance and lifetimes at temperatures ranging from -15C to 75C, including cycling. Through failure analysis, we have worked with our customers to enhance understanding of operation, mechanically and electrically. We have performed tests to understand contamination issues that have caused early failures. We are investigating functionality and performance of RF sensor applications to monitor corrosion and to predict critical component failures. By utilizing knowledge of MEMS and by providing unique measurement and characterization capabilities, we can be an integral part of any MEMS project.


Nombre: Lenny D. Ramirez C.
Asignatura: CRF
Direccion: http://www.mems.sandia.gov/about/rf-mems.html
Ver blogg: http://lennyramirez-crf.blogspot.com/

Reliability Enhancements

Reliability Enhancements

Despite the demonstrated performance advantages of RF MEMS switches, the technology to manufacture reliable, environmentally robust devices is still maturing. The dominant reliability issue with capacitive RF MEMS switches is charging of the switch dielectric. Switching voltages across a thin dielectric layer causes electrical charges to tunnel into the dielectric and become trapped within the insulator. As yet, the underlying physics of the charge tunneling and trapping is not well understood. Most of the present knowledge of this phenomenon has come from empirical measurement of the switches.

One novel method of circumventing the charging phenomena is by trading off switch performance for lifetime. Proximity switches, being developed by MEMtronics, enable low loss, effective operation at microwave and millimeter wavelengths without the detrimental effects of charging on switch lifetime. These switches have the potential for operating for > 100 billion cycles and handling hot switching at multi-watt power levels. At microwave and millimeter-wave frequencies, the reduced capacitance ratio of these switches (Con/Coff ~20-40) is still sufficient for constructing high-performance phase shifters and tunable filters.


The key to proximity switches is separating the mechanical support structure from that of the electrical coupling mechanism. This allows the switch to operate with little or no dielectric charging, the dominant mechanism that limits the lifetime of MEMS capacitive switches. Dielectric supports made of silicon nitride or silicon dioxide keep the upper electrode supported a short distance above the lower electrode. The electrical coupling of RF energy from the upper plate to the lower plate is accomplished capacitively through the air gap between the two plates. As most circuit designs can be made quite robust with respect to switch on-capacitance, capacitance ratio can be exchanged for improved switch lifetime.

The proximity switch has several distinct advantages compared to prior designs of capacitive RF MEMS switch:

Absolutely no charging of the gas occurs between the plates. The only charging that may occur is through the mechanical (dielectric) supports maintaining the spacing between the two plates, a very small proportion of the total switch area. This enables the switches to operate with extremely long lifetimes.

Maintaining an air gap between the plates reduces the sensitivity of switch performance to particle contamination. This increases the environmental robustness of the switch.

Lack of dielectric charging also makes these switches ideal candidates for space-based applications, where the impact of radiation on the switch would normally be a reliability issue.

These features make the proximity switch an excellent candidate as a next generation MEMS switch. It is expected that this switch embodiment will have greater than 10x improvement in switch lifetime due to the lack of dielectric charging.

Nombre: Lenny D. Ramirez C.
Asignatura: CRF
Direccion: http://www.memtronics.com/page.aspx?page_id=15
Ver blogg: http://lennyramirez-crf.blogspot.com/

RF MEMS phase shifters



RF MEMS phase shifters

We recently spoke with Dr. Koen Van Caekenberghe, author of several articles on RF MEMS technology for radar sensors, about RF MEMS phase shifters. Koen shares his thoughts on the small but growing RF MEMS phase shifter market including applications, market developments, pricing and vendors of RF MEMS phase shifters as well as alternative technologies.

The radar sensor market has a global turnover of about $6.25 billion annually according to Defense Industry Daily. In Koen's opinion, approximately 50% of the budget is spent on airborne, ground-based, and naval AESA radar sensors, and approximately 25% of the budget is spent on mechanically scanned radar sensors -- and during the next decade, 20% of the mechanically scanned radar sensors might be replaced by PESA radar sensors based on RF MEMS shifters, resulting in a potential global market of $300 million annual

MEMS Investor Journal: Please provide a general description of RF MEMS phase shifters.

Koen: RF MEMS phase shifters alter the phase of an RF signal by means of RF MEMS switches, switched capacitors, and varactors [1, 2]. Phase shifters are used in radars based on electronically scanned arrays.

MEMS Investor Journal: How do radars work?

Koen: Radars sense angle, range and velocity of (moving) scatterers in the environment. Radar figures of merit include field of view in terms of solid angle and maximum unambiguous range and velocity, as well as angular, range and velocity resolution. The angle of a target is detected by scanning the field of view with a directive beam. Scanning is done electronically, by scanning the beam of an array, or mechanically, by rotating an antenna. The range and radial velocity of a target are detected through frequency modulation (FM) ranging and range differentiation (frequency modulated continuous wave radar), or through pulse delay ranging and the Doppler effect (pulse-Doppler radar). The angular resolution is inversely related to the half power beamwidth of the antenna or the array, whereas the range resolution is inversely related to the signal bandwidth.

MEMS Investor Journal: As you mentioned, RF MEMS phase shifters are used in radars based on electronically scanned arrays. What are the main advantages of using them?

Koen: Electronically scanned arrays, or phased arrays, offer several advantages over mechanically scanned antennas such as multiple agile beams and interleaved radar modes. Figures of merit of an electronically scanned array, as shown in Fig. 1, are the bandwidth, the effective isotropically radiated power (EIRP) times the Gr/T product, the field of view, the half-power beamwidth, the pointing error, the polarization purity and the sidelobe level. EIRP is the product of the transmit gain, Gt, and the transmit power, Pt. Gr/T is the quotient of the receive gain and the antenna noise temperature. Gr and Gt are linearly related to the aperture area, whereas the half power beamwidth is inversely related to the largest aperture dimension. The field of view is limited by the antenna element spacing, d, and the pointing error is inversely related to the phase shift resolution (number of effective bits of the phase shifter).



Figure 1: Figures of merit of an electronically scanned array set the radar sensor’s ability to search and track targets.



MEMS Investor Journal: What is the history of RF MEMS phase shifters and where were they first developed?

Koen: RF MEMS phase shifters were pioneered by HRL, Malibu, CA [3], Raytheon, Dallas, TX [4], Rockwell Science, Thousand Oaks, CA [5], and the University of Michigan, Ann Arbor, MI [6], during the nineties. Since then loaded-line, reflection, switched LC network and switched-line phase shifter designs have been implemented using RF MEMS switches, switched capacitors and varactors, as shown in Fig. 2. The switched LC network phase shifter is the most common phase shifter. RF MEMS distributed loaded-line and switched-line true-time-delay phase shifters will enable ultra wideband (UWB) radar sensors, whereas RF MEMS reflection phase shifters will find application in reflect arrays; a reflect array is a particular embodiment of a PESA.



Figure 2: Loaded-line, reflection, switched LC network, and switched-line phase shifter designs have been implemented using RF MEMS switches, switched capacitors and varactors.


MEMS Investor Journal: Are RF MEMS phase shifters an extension of or an improvement on an existing technology? If so, can you describe for our readers the features and benefits as compared with existing systems?

Koen: While most RF MEMS switches, switched capacitors and varactors are biased electrostatically instead of magnetostatically, RF MEMS technology can be thought of being a microscopic extension of electromechanical relay and switch technology, which dates back to the 19th century [7]. The application of electromechanical relay technology is limited to the VHF band (30-300 MHz), which confines its application to tunable filters for multi-band VHF communication equipment such as used in public safety 2-way radio networks. RF MEMS technology enables the use of a broader RF spectrum, ranging from the VHF band to the W-band (75-110 GHz), with a corresponding increase in communication and sensing applications.

RF MEMS phase shifters offer lower insertion loss, and higher linearity and power handling than semiconductor phase shifters, enabling passive electronically scanned arrays (PESAs) with higher EIRP x Gr/T product and longer range detection. They do not consume prime power, but require a high control voltage and wafer-level packaging.
MEMS Investor Journal: How are RF MEMS phase shifters used today and what are the various markets in which they find application?

Koen: RF MEMS phase shifters will find application in airborne and space-borne PESA radar sensors, which require low prime power consumption but do not require long-range search and track capability. The low-altitude unmanned aerial vehicles (UAV) radar sensor market, for example, offers potential for RF MEMS phase shifters.

In general, the choice between an active electronically scanned array (AESA) and a PESA is determined by the range requirement. An AESA has distributed power amplification because every antenna is connected to a T/R module. An AESA therefore has a higher EIRP x Gr/T product (dynamic range) and better search and track capabilities than a PESA. A PESA has centralized power amplification, but offers cost, prime power consumption, size and weight savings, as shown in Fig. 3.

Some airborne platforms, such as fighter jets, have a dual need. For example they have a high-performance nose-cone AESA radar sensor to search and track agile targets, and a low-power pod-mounted PESA radar sensor underneath to measure the height, to follow (avoid) terrain, or to map the ground during a low fly over. The use depends on the range of the envisioned target.


Figure 3: AESA (left) versus PESA (right).

 
Nombre: Lenny D. Ramirez C.
Asignatura: CRF
Direccion http://www.memsinvestorjournal.com/2009/04/rf-mems-phase-shifters-.html
Ver blogg: http://lennyramirez-crf.blogspot.com/

Simulation of an RF MEMS Varactor

Simulation of an RF MEMS Varactor

An RF MEMS variable capacitor, consisting of two MEMS bridges, was simulated with CST MICROWAVE STUDIO® (CST MWS) and the results then compared with actual measurements. Figure 1 shows the structure as constructed in CST MWS. The width of the central conductor of the coplanar waveguide was 100 um, which is also equal to the distance between it and the ground planes. The bridges connecting the ground planes functioned as varactors between the RF signal and the ground. The 500 um thick silicon was used as a substrate, 1000nm thick Molybdenium as a metal of the transmission line, and MEMS bridges were constructed of 1000 nm Aluminium.

Figure 1: Geometry of the RF MEMS-varactor.
The capacitance of the varactor can be changed between 120 fF (up-state) and 360 fF (down-state). As the MEMS bridge represents a parallel plate capacitor, the height of the bridge could be easily calculated. The height of the bridges of the up-state was 1.1 um, and of the down-state 0.2 um. The simulation results of the S11- and S21-parameters of the varactor in the up-state are plotted in Figure 2 and Figure 3 respectively.





From figures 2 and 3 it can be seen that the curves are very close to the measured ones [1]. The measured results have slightly higher losses but the measured loss also contains loss arising from the contact resistance between the probe tip and the aluminium contact pads [1]. In the down-state the reflection becomes higher and the resonance frequency shifts from 44GHz to 34GHz as can be seen from the figure 4.


Figure 4 shows the simulated S11-parameter of the varactor in the down-state and also shows good correlation with measurement results [1


Nombre: Lenny D. Ramirez C.
Asignatura: CRF
Direccion http://www.cst.com/Content/Applications/Article/232
Ver blogg: http://lennyramirez-crf.blogspot.com/